Product Details Search Results:
Supertex.com/VN0116N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Drain Current-Max (Abs) (ID)":"0.2500 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...
1771 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1515 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1513 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P003
{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Operating Mode":"ENHANCEME...
1439 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1512 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1512 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1515 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1515 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1515 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1515 Bytes - 01:30:42, 30 September 2024
Supertex.com/VN0116N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"160 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...
1515 Bytes - 01:30:42, 30 September 2024
