Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"FORMERLY TO-3, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"160 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"8 MHz","Collector Current-Max (IC)":"20 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Number of Termina...

{"Status":"Active","Diode Type":"RECTIFIER DIODE"}...

{"Status":"ACTIVE","Number of Rows Loaded":"8","Terminal Pitch":"2 mm","Option":"GENERAL PURPOSE","Mounting Type":"BOARD","Contact Gender":"FEMALE","UL Flammability Code":"94V-0","Mounting Style":"STRAIGHT","Manufacturer Series":"HM15F","Termination Type":"PRESS FIT","Total Number of Contacts":"176","Connection Type":"TWO PART BOARD CONNECTOR"}...

{"Status":"ACTIVE","Number of Rows Loaded":"8","Terminal Pitch":"2 mm","Option":"GENERAL PURPOSE","Mounting Type":"BOARD","Contact Gender":"FEMALE","UL Flammability Code":"94V-0","Mounting Style":"STRAIGHT","Manufacturer Series":"HM30F","Termination Type":"PRESS FIT","Total Number of Contacts":"176","Connection Type":"TWO PART BOARD CONNECTOR"}...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"384 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"812 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...

{"Category":"Power MOSFET","Dimensions":"10 x 4.5 x 15 mm","Maximum Continuous Drain Current":"\u00b111 A","Width":"4.5 mm","Maximum Drain Source Voltage":"900 V","Package Type":"TO-220F","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"60 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"37 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2300 pF @ 25 V","Length":"10 mm"...

{"Status":"Discontinued","t(rr) Max.(s) Rev.Rec. Time":"400n","Semiconductor Material":"Silicon","Package":"Axial-B","I(O) Max.(A) Output Current":"400m","I(RM) Max.(A) Reverse Current":"10u","@V(R) (V)(Test Condition)":"1.5k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.5k","@I(F) (A) (Test Condition)":"2.0m","Military":"N","@I(FM) (A) (Test Condition)":"400m","V(FM) Max.(V) Forward Voltage":"2.5"}...

{"Status":"Transferred","Package Body Material":"GLASS","Case Connection":"ISOLATED","Configuration":"SINGLE","JESD-30 Code":"O-LALF-W2","Terminal Form":"WIRE","Rep Pk Reverse Voltage-Max":"1500 V","Number of Terminals":"2","Operating Temperature-Max":"150 Cel","Diode Element Material":"SILICON","Output Current-Max":"0.4000 A","Qualification Status":"COMMERCIAL","Forward Voltage-Max (VF)":"2.5 V","Sub Category":"Rectifier Diodes","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"RO...

{"Status":"ACTIVE","Capacitor Type":"CERAMIC","Manufacturer Series":"HV-HIGHTEMP"}...

{"Status":"ACTIVE","Capacitor Type":"CERAMIC","Manufacturer Series":"HV-HIGHTEMP"}...