T1G6000528-Q3 C BAND, GaN, N-CHANNEL, RF POWER, HEMFET
From TriQuint
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 85 V |
| EU RoHS Compliant | Yes |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | C BAND |
| Lead Free | Yes |
| Mfr Package Description | 5 X 4 MM, ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | DEPLETION |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLATPACK |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN/GOLD |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM NITRIDE |
| Transistor Type | RF POWER |
