TK10A60D(Q,M)
MOSFET N-CH 600V 10A TO220SIS

From Toshiba Semiconductor and Storage

Catalog DrawingsTK Series Side 3 TK Series Side 2 TK Series TO-220F Side 1
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C10A (Ta)
DatasheetsTK10A60D - Mosfets Prod Guide
Drain to Source Voltage (Vdss)600V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs25nC @ 10V
Input Capacitance (Ciss) @ Vds1350pF @ 25V
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
PackagingTube
Power - Max45W
Product PhotosTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs750 mOhm @ 5A, 10V
Series-
Standard Package50
Supplier Device PackageTO-220SIS
Vgs(th) (Max) @ Id4V @ 1mA

External links