RN2701JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV
From Toshiba Semiconductor and Storage
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Datasheets | RN2701JE-06JE - |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Frequency - Transition | 200MHz |
| Mounting Type | Surface Mount |
| Online Catalog | PNP Pre-Biased Transistor Arrays |
| Other Names | RN2701JE(TE85LF)DKR |
| Package / Case | SOT-553 |
| Packaging | Digi-Reel® |
| Power - Max | 100mW |
| Product Photos | SOT-553 |
| Resistor - Base (R1) (Ohms) | 4.7k |
| Resistor - Emitter Base (R2) (Ohms) | 4.7k |
| Series | - |
| Standard Package | 1 |
| Supplier Device Package | ESV |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
