2SK3667(Q)
MOSFET N-CH 600V 7.5A TO220SIS

From Toshiba Semiconductor and Storage

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Datasheets2SK3667 Mosfets Prod Guide
Drain to Source Voltage (Vdss)600V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs33nC @ 10V
Input Capacitance (Ciss) @ Vds1300pF @ 25V
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
PackagingBulk
Power - Max45W
Product PhotosTO-220AB TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs1 Ohm @ 4A, 10V
Series-
Standard Package50
Supplier Device PackageTO-220SIS
Vgs(th) (Max) @ Id4V @ 1mA

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