TPCF8105 6000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Toshiba America Electronic Components, Inc.
Status | ACTIVE |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 6 A |
Drain-source On Resistance-Max | 0.0410 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | THIN, 2-3U1S, VS-8, 8 PIN |
Number of Elements | 1 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Surface Mount | Yes |
Terminal Form | FLAT |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |