TIM1414-4LA
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min15 V
Drain Current-Max (ID)5.2 A
EU RoHS CompliantYes
FET TechnologyJUNCTION
Highest Frequency BandKU BAND
Lead FreeYes
Mfr Package DescriptionHERMETIC SEALED, 2-9D1B, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeDEPLETION
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialGALLIUM ARSENIDE
Transistor TypeRF POWER

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