TIM1414-4LA KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
From Toshiba America Electronic Components, Inc.
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 15 V |
Drain Current-Max (ID) | 5.2 A |
EU RoHS Compliant | Yes |
FET Technology | JUNCTION |
Highest Frequency Band | KU BAND |
Lead Free | Yes |
Mfr Package Description | HERMETIC SEALED, 2-9D1B, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | DEPLETION |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | FLAT |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF POWER |