SSM6K202FE
2300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)2.3 A
Drain-source On Resistance-Max0.0850 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionES6, 2-2N1A, 6 PIN
Number of Elements1
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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