HN1D01FTE85N 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Average Forward Current-Max | 0.1000 A |
| Configuration | 2 BANKS, COMMON ANODE, 2 ELEMENTS |
| Diode Element Material | SILICON |
| Diode Type | SIGNAL DIODE |
| Number of Elements | 4 |
| Number of Terminals | 6 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Limit-Max | 0.9000 W |
| Reverse Recovery Time-Max | 0.0040 us |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
