GT10J312(SM) 10 A, 600 V, N-CHANNEL IGBT
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Case Connection | COLLECTOR |
| Channel Type | N-CHANNEL |
| Collector Current-Max (IC) | 10 A |
| Collector-emitter Voltage-Max | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Mfr Package Description | LEAD FREE, 2-10S2C, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 400 ns |
| Turn-on Time-Nom (ton) | 400 ns |
