2SC5086-O,LF
Bipolar Transistors - BJT Radio-Frequency Bipolar Transistor

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO20 V
Collector- Emitter Voltage VCEO Max12 V
ConfigurationSingle
DC Collector/Base Gain hfe Min80 at 20 mA at 10 V
DC Current Gain hFE Max240 at 20 mA at 10 V
Emitter- Base Voltage VEBO3 V
Gain Bandwidth Product fT7 GHz
ManufacturerToshiba
Maximum DC Collector Current80 mA
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSC-75-3
PackagingReel
Pd - Power Dissipation100 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Transistor PolarityNPN

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