2SA1588-O,LF
Bipolar Transistors - BJT Bias Resistor Built-in transistor

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 35 V
Collector- Emitter Voltage VCEO Max- 30 V
Collector-Emitter Saturation Voltage- 0.25 V
DC Collector/Base Gain hfe Min25
DC Current Gain hFE Max400
Emitter- Base Voltage VEBO- 5 V
Gain Bandwidth Product fT200 MHz
ManufacturerToshiba
Maximum DC Collector Current- 500 mA
Mounting StyleSMD/SMT
Package / CaseSC-70-3
PackagingReel
Pd - Power Dissipation100 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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