VQ1000J 200 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Teledyne Technologies Incorporated
| Status | Discontinued |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 0.2000 A |
| Drain-source On Resistance-Max | 5.5 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5 pF |
| JESD-30 Code | R-PDIP-T14 |
| Number of Elements | 4 |
| Number of Terminals | 14 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 2 W |
| Qualification Status | COMMERCIAL |
| Surface Mount | NO |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
