Product Datasheet Search Results:
- TIM1414-10LA
- Toshiba America Electronic Components, Inc.
- KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
- TIM1414-10LA-252
- Toshiba America Electronic Components, Inc.
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
- TIM1414-10LA
- Toshiba
- FET, Microwave Power GaAs FET Transistor, ID 11.5 A
Product Details Search Results:
Toshiba.co.jp/TIM1414-10LA
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-11C1B, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"11.5 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","T...
1427 Bytes - 16:18:17, 29 November 2024
Toshiba.co.jp/TIM1414-10LA-252
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"11.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description"...
1495 Bytes - 16:18:17, 29 November 2024
Documentation and Support
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