VQ7254N7
1600 mA, 20 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Supertex, Inc.

StatusDiscontinued
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (Abs) (ID)1.6 A
Drain Current-Max (ID)1.6 A
Drain-source On Resistance-Max2 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)50 pF
JESD-30 CodeR-CDIP-T14
JESD-609 Codee0
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleIN-LINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max2 W
Power Dissipation-Max (Abs)2 W
Qualification StatusCOMMERCIAL
Sub CategoryOther Transistors
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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