VQ1000N6 0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Supertex, Inc.
| Status | Discontinued |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 0.5000 A |
| Drain Current-Max (ID) | 0.2250 A |
| Drain-source On Resistance-Max | 5.5 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5 pF |
| JESD-30 Code | R-PDIP-T14 |
| JESD-609 Code | e0 |
| Mfr Package Description | PLASTIC, DIP-14 |
| Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Elements | 4 |
| Number of Terminals | 14 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2 W |
| Pulsed Drain Current-Max (IDM) | 1 A |
| Qualification Status | COMMERCIAL |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 10 ns |
| Turn-on Time-Max (ton) | 10 ns |
