VP1509NW
1200 mA, 90 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Supertex, Inc.

StatusActive
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min90 V
Drain Current-Max (ID)1.2 A
Drain-source On Resistance-Max15 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)8 pF
JESD-30 CodeX-XUUC-N
JESD-609 Codee0
Mfr Package DescriptionDIE
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialUNSPECIFIED
Package ShapeUNSPECIFIED
Package StyleUNCASED CHIP
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Qualification StatusCOMMERCIAL
REACH CompliantYes
Sub CategoryOther Transistors
Surface MountYES
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionUPPER
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

External links