VP0109ND(VF15)
250 mA, 90 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Supertex, Inc.

StatusActive
Additional FeatureHIGH INPUT IMPEDANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min90 V
Drain Current-Max (ID)0.2500 A
Drain-source On Resistance-Max8 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)8 pF
JESD-30 CodeS-XUUC-N2
Mfr Package DescriptionDIE-2
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT MODE
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleUNCASED CHIP
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Surface MountYES
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionUPPER
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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