VN2206N3 1200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
From Supertex, Inc.
| Status | Discontinued |
| Additional Feature | HIGH INPUT IMPEDANCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 1.2 A |
| Drain-source On Resistance-Max | 0.3500 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 65 pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | NOT APPLICABLE |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1 W |
| Qualification Status | COMMERCIAL |
| REACH Compliant | Yes |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
