VN1110ND 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Supertex, Inc.
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain-source On Resistance-Max | 0.7000 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 25 pF |
| JESD-30 Code | S-XUUC-N2 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | UNSPECIFIED |
| Package Shape | SQUARE |
| Package Style | UNCASED CHIP |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | COMMERCIAL |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | TIN LEAD |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
