VN0360N1
2.5 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

From Supertex, Inc.

StatusDiscontinued
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V
Drain Current-Max (Abs) (ID)2.5 A
Drain Current-Max (ID)2.5 A
Drain-source On Resistance-Max6 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)50 pF
JEDEC-95 CodeTO-3
JESD-30 CodeO-MBFM-P2
JESD-609 Codee0
Moisture Sensitivity LevelNOT SPECIFIED
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 Cel
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation Ambient-Max100 W
Power Dissipation-Max (Abs)100 W
Pulsed Drain Current-Max (IDM)6 A
Qualification StatusCOMMERCIAL
Sub CategoryFET General Purpose Power
Surface MountNO
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Turn-off Time-Max (toff)125 ns
Turn-on Time-Max (ton)30 ns

External links