AN0416WG N-Channel Enhancement Mode MOSFET Array - V(SD)=1.3V at 50mA. ESD Gate Protection
From Supertex, Inc.
| @Freq. (Hz) (Test Condition) | 1.0M |
| @I(D) (A) (Test Condition) | 10m |
| @Pulse Width (s) (Condition) | 300u |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 25 |
| @V(GS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 1.4 |
| C(iss) Max. (F) | 12p |
| I(D) Abs. Drain Current (A) | 30m |
| I(DM) Max (A)(@25°C) | 75m |
| I(DSS) Max. (A) | 1.0n |
| I(GSS) Max. (A) | 1.0n |
| Military | N |
| Package | SO |
| Thermal Resistance Junc-Amb. | 110 |
| V(BR)DSS (V) | 160 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 5.0 |
| V(GS)th Min. (V) | 2.0 |
| g(fs) Max, (S) Trans. conduct, | 8.0m |
| g(fs) Min. (S) Trans. conduct. | 4.0m |
| r(DS)on Max. (Ohms) | 350 |
| t(d)off Max. (s) Off time | 8.0n |
| t(f) Max. (s) Fall time. | 5.0n |
| t(r) Max. (s) Rise time | 5.0n |
| td(on) Max (s) On time delay | 5.0n |
