STD100NH02-1
60 A, 24 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

From STMicroelectronics, Inc.

StatusACTIVE
Avalanche Energy Rating (Eas)800 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min24 V
Drain Current-Max (ID)60 A
Drain-source On Resistance-Max0.0048 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionROHS COMPLIANT, TO-251, IPAK-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)240 A
Terminal FinishTIN
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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