SGSP222
N-Channel Enhancement MOSFET

From STMicroelectronics

@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)5.0
@V(DS) (V) (Test Condition)25
Absolute Max. Power Diss. (W)50
C(iss) Max. (F)550p
I(D) Abs. Drain Current (A)10
I(DSS) Min. (A)1.0m
I(GSS) Max. (A)100n
MilitaryN
PackageSOT-82
V(BR)DSS (V)50
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.3
r(DS)on Max. (Ohms)130m
t(f) Max. (s) Fall time.30n
t(r) Max. (s) Rise time55n

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