SGSP222 N-Channel Enhancement MOSFET
From STMicroelectronics
@(VDS) (V) (Test Condition) | 20 |
@I(D) (A) (Test Condition) | 5.0 |
@V(DS) (V) (Test Condition) | 25 |
Absolute Max. Power Diss. (W) | 50 |
C(iss) Max. (F) | 550p |
I(D) Abs. Drain Current (A) | 10 |
I(DSS) Min. (A) | 1.0m |
I(GSS) Max. (A) | 100n |
Military | N |
Package | SOT-82 |
V(BR)DSS (V) | 50 |
V(BR)GSS (V) | 20 |
g(fs) Min. (S) Trans. conduct. | 3 |
r(DS)on Max. (Ohms) | 130m |
t(f) Max. (s) Fall time. | 30n |
t(r) Max. (s) Rise time | 55n |