IRF541FI N-Channel Enhancement MOSFET
From STMicroelectronics
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 17 |
| Absolute Max. Power Diss. (W) | 40 |
| C(iss) Max. (F) | 1.6n |
| I(D) Abs. Drain Current (A) | 15 |
| I(DSS) Min. (A) | 1.0m |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-220AB |
| V(BR)DSS (V) | 80 |
| V(BR)GSS (V) | 20 |
| g(fs) Min. (S) Trans. conduct. | 8.7 |
| r(DS)on Max. (Ohms) | 77m |
| t(f) Max. (s) Fall time. | 30n |
| t(r) Max. (s) Rise time | 60n |
