2N4860A JFET Transistor, Junction Field Effect, JFET, -30 V, 20 mA, 100 mA, -6 V, TO-18
From SOLID STATE
| Breakdown Voltage Vbr: | -30 V |
| Gate-Source Cutoff Voltage Vgs(off) Max: | -6 V |
| MSL: | - |
| No. of Pins: | 3 |
| Operating Temperature Max: | - |
| Power Dissipation Pd: | 300 mW |
| SVHC: | No SVHC (15-Jun-2015) |
| Transistor Case Style: | TO-18 |
| Transistor Type: | JFET |
| Zero Gate Voltage Drain Current Idss Max: | 100 mA |
| Zero Gate Voltage Drain Current Idss Min: | 20 mA |
| Zero Gate Voltage Drain Current Idss: | 20mA to 100mA |
