2N4856A
JFET Transistor, Junction Field Effect, JFET, -40 V, 50 mA, -10 V, TO-18

From SOLID STATE

Breakdown Voltage Vbr:-40 V
Gate-Source Cutoff Voltage Vgs(off) Max:-10 V
MSL:-
No. of Pins:3
Operating Temperature Max:-
Power Dissipation Pd:300 mW
SVHC:No SVHC (15-Jun-2015)
Transistor Case Style:TO-18
Transistor Type:JFET
Zero Gate Voltage Drain Current Idss Max:50 mA
Zero Gate Voltage Drain Current Idss Min:-
Zero Gate Voltage Drain Current Idss:50mA

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