AFM08P2-00
K BAND, GaAs, N-CHANNEL, RF POWER, MESFET

From Skyworks Solutions, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min6 V
Drain Current-Max (ID)0.3600 A
FET TechnologyMETAL SEMICONDUCTOR
Highest Frequency BandK BAND
Mfr Package DescriptionDIE-2
Number of Elements1
Number of Terminals2
Operating ModeDEPLETION
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleUNCASED CHIP
Power Dissipation Ambient-Max1.6 W
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionUPPER
Transistor ApplicationAMPLIFIER
Transistor Element MaterialGALLIUM ARSENIDE
Transistor TypeRF POWER

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