SI7922DN-T1-E3 DUAL N-CHANNEL 100-V (D-S) MOSFET
From Siliconix / Vishay
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Gate, Dual Source, Quad Drain |
| Dimensions | 3.15 x 3.15 x 1.07 mm |
| Forward Diode Voltage | 1.2 V |
| Forward Transconductance | 5.3 S |
| Height | 1.07 mm |
| Length | 3.15 mm |
| Maximum Continuous Drain Current | 1.8 A |
| Maximum Drain Source Resistance | 0.23 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.3 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | PowerPAK-SO-8 |
| Pin Count | 8 |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V |
| Typical Turn On Delay Time | 7 ns |
| Typical TurnOff Delay Time | 8 ns |
| Width | 3.15 mm |
