SKT513F12DT
Silicon Controlled Rectifier - Amplifying interdigitated gate.

From Semikron

@I(T) (A) (Test Condition)1.8k
@Temp. (°C) (Test Condition)125
I(D) Max. (A) Leakage Current100m
I(GT) Max. (A)250m
I(H) Max.(A) Holding Current400m
I(T) Max.(A) On-state Current510±
I(TSM) Max. (A)11k
MilitaryN
PackageTO-200AB
V(DRM) Max.(V)Rep.Pk.Off Volt.1.2k
V(GT) Max.(V)4.0
V(T) Max. (V)2.2
dv/dt Min. (V/us)500
t(q) Typ. (s)20u

External links