PZT3906T/R Si PNP Power BJT
From Philips Semiconductors / NXP Semiconductors
| @I(C) (A) (Test Condition) | 0.1m |
| @V(CE) (V) (Test Condition) | 1.0 |
| Absolute Max. Power Diss. (W) | 1.5 |
| I(C) Abs.(A) Collector Current | 200m |
| I(CBO) Max. (A) | 50n |
| Military | N |
| Package | SOT-223 |
| V(BR)CBO (V) | 40 |
| V(BR)CEO (V) | 40 |
| f(T) Min. (Hz) Transition Freq | 250M |
| h(FE) Min. Static Current Gain | 60 |
| t(d) Max. (s) Delay time. | 35n |
| t(r) Max. (s) Rise time | 35n |
| t(s) Max. (s) Storage time. | 225n |
