PZT2907AT/R Si PNP Power BJT
From Philips Semiconductors / NXP Semiconductors
| @Freq. (Hz) (Test Condition) | 100k |
| @I(B) (A) (Test Condition) | 15m |
| @I(C) (A) (Test Condition) | 50m |
| @V(CB) (V) (Test Condition) | 10 |
| @V(CBO) (V) (Test Condition) | 50 |
| @V(CE) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 1.5 |
| C(obo) (Max) (F) | 8p |
| I(C) Abs.(A) Collector Current | 600m |
| I(CBO) Max. (A) | 20n |
| Military | N |
| Package | SOT-223 |
| V(BR)CBO (V) | 60 |
| V(BR)CEO (V) | 60 |
| V(CE)sat Max.(V) | .4 |
| f(T) Min. (Hz) Transition Freq | 200M |
| h(FE) Min. Static Current Gain | 75 |
| t(d) Max. (s) Delay time. | 10n |
| t(f) Max. (s) Fall time. | 30n |
| t(off) Max. (s) Turn-Off Time | 100n |
| t(on) Max. (s) Turn-On Time | 45n |
| t(r) Max. (s) Rise time | 40n |
| t(s) Max. (s) Storage time. | 80n |
