LTE21009RA Bipolar NPN UHF-Microwave Transisitor - Tested by sampling on RF parameters
From Philips Semiconductors / NXP Semiconductors
| Status | Discontinued |
| @Freq. (Hz) (Test Condition) | 2.1G |
| @I(C) (A) (Test Condition) | 150m |
| @V(CBO) (V) (Test Condition) | 20 |
| @V(CE) (V) (Test Condition) | 16 |
| Absolute Max. Power Diss. (W) | 4.0 |
| I(C) Abs.(A) Collector Current | 250m |
| I(CBO) Max. (A) | 50u |
| Military | N |
| Package | FO-41B |
| Power Gain Min. (dB) | 8.5 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 40 |
| V(BR)CEO (V) | 16 |
| f(T) Min. (Hz) Transition Freq | 2.1G |
| h(FE) Max. Current gain. | 150 |
| h(FE) Min. Static Current Gain | 15 |
