BC550CT/R
Si NPN LP HF BJT

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1.0M
@I(B) (A) (Test Condition)5.0m
@I(C) (A) (Test Condition)2.0m
@V(CBO) (V) (Test Condition)30
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)625m
C(obo) (Max) (F)2.5p
I(C) Abs.(A) Collector Current100m
I(CBO) Max. (A)15n
MilitaryN
PackageTO-92
V(BR)CBO (V)50
V(BR)CEO (V)45
V(CE)sat Max.(V).60
f(T) Min. (Hz) Transition Freq250M
h(FE) Max. Current gain.800
h(FE) Min. Static Current Gain420
h(fe) Min. SS Current gain.450
t(off) Max. (s) Turn-Off Time250n
t(on) Max. (s) Turn-On Time70n

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