ATF35576 N-Channel UHF-Microwave JFET - GaAs Schottky-barrier-gate FET
From Hewlett-Packard / Agilent
| @Freq. (Hz) (Test Condition) | 12G |
| @I(D) (A) (Test Condition) | 10m |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 1.5 |
| I(D) Abs. Drain Current (A) | 70m |
| I(DSS) Max. (A) | 70m |
| I(DSS) Min. (A) | 20m |
| Noise Figure Max. (dB) | 2.0 |
| P(D) Max.(W) Power Dissipation | 225m |
| Package | Micro-Xvar |
| Semiconductor Material | GaAs |
| g(fs) Max, (S) Trans. conduct, | 65m |
| g(fs) Min. (S) Trans. conduct. | 40m |
