M485L2829BT0-CB0 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.7500 ns |
| Memory Density | 9.66E9 deg |
| Memory IC Type | DDR DRAM MODULE |
| Memory Width | 72 |
| Mfr Package Description | SODIMM-200 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 200 |
| Number of Words | 1.34E8 words |
| Number of Words Code | 128M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 128M X 72 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | MICROELECTRONIC ASSEMBLY |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
