M470T2863FB3-CE6 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA200
From Samsung Semiconductor Division
| Status | DISCONTINUED |
| Access Mode | SINGLE BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.4500 ns |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 8.59E9 deg |
| Memory IC Type | DDR DRAM MODULE |
| Memory Width | 64 |
| Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 200 |
| Number of Words | 1.34E8 words |
| Number of Words Code | 128M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 128M X 64 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | MICROELECTRONIC ASSEMBLY |
| Supply Voltage-Max (Vsup) | 1.9 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Temperature Grade | OTHER |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Pitch | 0.6000 mm |
| Terminal Position | DUAL |
