KFN2G16Q2A-DEB60 128M X 16 FLASH 1.8V PROM, 76 ns, PBGA63
From Samsung Semiconductor Division
Status | DISCONTINUED |
Access Time-Max (tACC) | 76 ns |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Memory Density | 2.05E9 deg |
Memory IC Type | FLASH 1.8V PROM |
Memory Width | 16 |
Mfr Package Description | 11 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 |
Number of Functions | 1 |
Number of Terminals | 63 |
Number of Words | 1.28E8 words |
Number of Words Code | 128M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -30 Cel |
Organization | 128M X 16 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 1.95 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | OTHER |
Terminal Finish | NOT SPECIFIED |
Terminal Form | BALL |
Terminal Pitch | 0.8000 mm |
Terminal Position | BOTTOM |