K9K1G08U0B-GIB00 128M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Time-Max (tACC) | 30 ns |
| Memory Density | 1.02E9 deg |
| Memory IC Type | FLASH 2.7V PROM |
| Memory Width | 8 |
| Mfr Package Description | FBGA-63 |
| Number of Functions | 1 |
| Number of Terminals | 63 |
| Number of Words | 1.28E8 words |
| Number of Words Code | 128M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 128M X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
