K4C89093AF-GCFB0 32M X 9 DDR DRAM, 0.5 ns, PBGA144
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.5000 ns |
| Memory Density | 3.02E8 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 9 |
| Mfr Package Description | 1 X 1 MM PITCH, FBGA-144 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 144 |
| Number of Words | 3.36E7 words |
| Number of Words Code | 32M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 32M X 9 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE |
| Supply Voltage-Max (Vsup) | 2.62 V |
| Supply Voltage-Min (Vsup) | 2.38 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 1 mm |
| Terminal Position | BOTTOM |
