DTC115EVA Pre-Biased Digital Transistor
From ROHM Electronics
@I(C) (A) (Test Condition) | 5.0m |
@V(CE) (V) (Test Condition) | 5.0 |
Absolute Max. Power Diss. (W) | 300m |
Collector-Emitter Diode? Y/N | No |
I(C) Abs.(A) Collector Current | 20m |
No. of Units Per Package | 1 |
Package | SIP |
RB (Ohms) Base input resistor. | 100k |
RBE (Ohms) Base-Emit. resistor | 100k |
Semiconductor Material | Silicon |
Structure NPN/PNP | NPN |
V(BR)CEO (V) | 50 |
h(FE) Min. Static Current Gain | 82 |