DTC115EV Pre-Biased Digital Transistor
From ROHM Electronics
| @I(B) (A) (Test Condition) | 250u |
| @I(C) (A) (Test Condition) | 5.0m |
| @V(CBO) (V) (Test Condition) | 50 |
| @V(CE) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 300m |
| Collector-Emitter Diode? Y/N | No |
| I(C) Abs.(A) Collector Current | 100m |
| I(CBO) Max. (A) | 500n |
| No. of Units Per Package | 1 |
| Package | SIP |
| RB (Ohms) Base input resistor. | 100k |
| RBE (Ohms) Base-Emit. resistor | 100k |
| Semiconductor Material | Silicon |
| Structure NPN/PNP | NPN |
| V(BR)CBO (V) | 50 |
| V(BR)CEO (V) | 50 |
| V(CE)sat Max.(V) | .30 |
| f(T) Min. (Hz) Transition Freq | 250M |
| h(FE) Min. Static Current Gain | 82 |
