HVC308ATRF
35 V, SILICON, VARIABLE CAPACITANCE DIODE

From Renesas Electronics

StatusACTIVE
Breakdown Voltage-Min35 V
ConfigurationSINGLE
Diode Capacitance Ratio-Min7.12
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Number of Elements1
Number of Terminals2
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormFLAT
Terminal PositionDUAL

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