RPK2006 N-Channel UHF-Microwave HEMT
From Raytheon Electronics
| @Freq. (Hz) (Test Condition) | 20G |
| @V(DD) (V) (Test Condition) | 8.0 |
| @V(DS) (V) (Test Condition) | 5.0 |
| Efficiency Min. (%) | 22 |
| I(DSS) Max. (A) | 270m |
| I(DSS) Min. (A) | 110m |
| Operating Power Output Typ.(W) | 330m |
| P(D) Max.(W) Power Dissipation | 1.5 |
| Package | Chip |
| Semiconductor Material | GaAs |
| V(BR)DSS (V) | 12 |
| V(BR)GSS (V) | 10 |
| V(GS)off Max. (V) | 7.0 |
| g(fs) Max, (S) Trans. conduct, | 75m |
| g(fs) Min. (S) Trans. conduct. | 50m |
