Product Datasheet Search Results:

RJK6024DPD-00-J2.pdf7 Pages, 75 KB, Original
RJK6024DPD-00-J2
Renesas Electronics
0.4 A, 600 V, 42 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/RJK6024DPD-00-J2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"42 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.6000 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application":"SWITCHING","S...
1484 Bytes - 07:08:31, 24 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
B43570-J2109-Q.pdf0.161Request
B43550-J2109-Q.pdf0.161Request
B43550-J2158-Q.pdf0.161Request
B43570-J228-Q.pdf0.161Request
B43570-J2158-Q.pdf0.161Request
B43550-J228-Q.pdf0.161Request
FT-H20-J20.pdf59.241Request
FT-H20-J20-S.pdf59.241Request