QJD1210006 100 A, 1200 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, SiC, POWER, MOSFET
From Powerex, Inc. - PA
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min | 1200 V |
| Drain Current-Max (ID) | 100 A |
| Drain-source On Resistance-Max | 0.0250 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | MODULE-7 |
| Number of Elements | 2 |
| Number of Terminals | 7 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 250 A |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Transistor Type | GENERAL PURPOSE POWER |
