V58C2128404SBE5B 32M X 4 DDR DRAM, 0.65 ns, PDSO66
From PROMOS TECHNOLOGIES INC
| Status | Active |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max | 0.6500 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 200 MHz |
| EU RoHS Compliant | Yes |
| I/O Type | COMMON |
| Interleaved Burst Length | 2,4,8 |
| JESD-30 Code | R-PDSO-G66 |
| Length | 22.22 mm |
| Memory Density | 1.34E8 bit |
| Memory IC Type | DDR DRAM |
| Memory Width | 4 |
| Mfr Package Description | 0.400 X 0.875 INCH, LEAD FREE, PLASTIC, MS-024FC, TSOP2-66 |
| Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 66 |
| Number of Words | 3.36E7 words |
| Number of Words Code | 32M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 32MX4 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TSOP2 |
| Package Equivalence Code | TSSOP66,.46 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies (V) | 2.6 |
| Qualification Status | COMMERCIAL |
| Refresh Cycles | 4096 |
| Seated Height-Max | 1.2 mm |
| Sequential Burst Length | 2,4,8 |
| Standby Current-Max | 0.0200 Amp |
| Sub Category | DRAMs |
| Supply Current-Max | 0.3550 Amp |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.5 V |
| Supply Voltage-Nom (Vsup) | 2.6 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.6500 mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Width | 10.16 mm |
