PMBT2222AYSX
Bipolar Transistors - BJT 40V Double NPN Switching Transistor

From NXP Semiconductors

BrandNXP Semiconductors
Collector- Base Voltage VCBO75 V
Collector- Emitter Voltage VCEO Max40 V
Collector-Emitter Saturation Voltage1 V
ConfigurationDual
DC Collector/Base Gain hfe Min100 at 150 mA, 10 V
DC Current Gain hFE Max300 at 150 mA, 10 V
Emitter- Base Voltage VEBO6 V
Gain Bandwidth Product fT300 MHz
ManufacturerNXP
Maximum DC Collector Current800 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseTSOP-6
PackagingReel
Pd - Power Dissipation550 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Transistor PolarityNPN, NPN

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