MRFE6VP61K25GSR5
Trans RF FET N-CH 133V 5-Pin NI-1230S T/R

From NXP SEMICONDUCTORS

Channel ModeEnhancement
Channel TypeN
Drain Efficiency (Typ)74(%)
Drain Source Voltage (Max)133(V)
Frequency (Max)600(MHz)
Frequency (Min)1.8(MHz)
Input Capacitance (Typ)@Vds562@50V(pF)
Mode Of OperationCW/Pulsed RF
MountingSurface Mount
Number of Elements2
Operating Temp Range-55C to 225C
Output Capacitance (Typ)@Vds185@50V(pF)
Package TypeNI-1230S
PackagingTape and Reel
Pin Count5
Power Gain (Typ)@Vds24(dB)
Rad HardenedNo
Reverse Capacitance (Typ)2.8@50V(pF)
Screening LevelMilitary

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